DIODES · FETs & Power MOSFETs · MPN DMN10H700S-13
No reviews yet — be the first to review DIODES DMN10H700S-13.
| Gate Charge(Qg) | 4.6nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 700mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 400mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 700mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 235pF |
N-Channel 100V 0.7A 0.4W Surface Mount SOT-23-3