DIODES · FETs & Power MOSFETs · MPN DMN10H6D2LFDB-13
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| Current - Continuous Drain(Id) | 270mA |
|---|---|
| Pd - Power Dissipation | 1W |
| RDS(on) | 10Ω@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Drain to Source Voltage | 100V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 3.1pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 41pF |
| Gate Charge(Qg) | 1.2nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 4.2pF |
270mA 1W 10Ω@4.5V 2V 2 N-Channel UDFN2020-6 FET, MOSFET Arrays RoHS