DIODES DMN10H220LVT-7

DIODES · FETs & Power MOSFETs · MPN DMN10H220LVT-7

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Specifications

Gate Charge(Qg)8.3nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)22pF
Current - Continuous Drain(Id)2.24A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation1.67W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)172mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)401pF

Technical details

N-Channel 100V 2.24A 1.67W Surface Mount TSOT-23

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