DIODES DMN10H220LQ-7

DIODES · FETs & Power MOSFETs · MPN DMN10H220LQ-7

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Specifications

Gate Charge(Qg)4.1nC@4.5V
Drain to Source Voltage100V
Output Capacitance(Coss)22pF
Current - Continuous Drain(Id)1.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)220mΩ@10V;250mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)401pF

Technical details

N-Channel 100V 1.6A 1.3W Surface Mount SOT-23

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