DIODES DMN10H220LK3-13

DIODES · FETs & Power MOSFETs · MPN DMN10H220LK3-13

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Specifications

Gate Charge(Qg)6.7nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)23pF
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation18.7W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)179mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)384pF

Technical details

N-Channel 100V 7.5A 18.7W Surface Mount TO-252

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