DIODES DMN10H220LFDF-7

DIODES · FETs & Power MOSFETs · MPN DMN10H220LFDF-7

No reviews yet — be the first to review DIODES DMN10H220LFDF-7.

Specifications

Gate Charge(Qg)8.3nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)1.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)220mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)401pF

Technical details

N-Channel 100V 1.6A 1.3W Surface Mount DFN2020-6

Related FETs & Power MOSFETs