DIODES · FETs & Power MOSFETs · MPN DMN10H220LFDF-13
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| Gate Charge(Qg) | 6.7nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 2.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 225mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 384pF |
100V 2.2A 2.5V 1.1W 225mΩ@10V 1 N-channel UDFN2020-6 Single FETs, MOSFETs RoHS