DIODES DMN10H220LE-13

DIODES · FETs & Power MOSFETs · MPN DMN10H220LE-13

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Specifications

Gate Charge(Qg)8.3nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)250mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)401pF
TypeN-Channel

Technical details

N-Channel 100V 2.3A 1.8W Surface Mount SOT-223

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