DIODES DMN10H220LDV-13

DIODES · FETs & Power MOSFETs · MPN DMN10H220LDV-13

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Specifications

Current - Continuous Drain(Id)10.5A
RDS(on)270mΩ@4.5V
Pd - Power Dissipation40W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage100V
TypeN-Channel
Number2 N-Channel
Input Capacitance(Ciss)366pF
Gate Charge(Qg)6.7nC@10V
Operating Temperature-55℃~+150℃

Technical details

10.5A 270mΩ@4.5V 40W 2.5V 2 N-Channel VDFN-8 FET, MOSFET Arrays RoHS

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