DIODES · FETs & Power MOSFETs · MPN DMN10H170SVT-7
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 9.7nC@10V |
| Current - Continuous Drain(Id) | 2.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 160mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.167nF |
N-Channel 100V 2.6A 1.7W Surface Mount TSOT-26