DIODES · FETs & Power MOSFETs · MPN DMN10H170SVT-13
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| Gate Charge(Qg) | 9.7nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 2.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 160mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.167nF |
100V 2.6A 3V 1.2W 160mΩ@10V 1 N-channel TSOT-26 Single FETs, MOSFETs RoHS