DIODES DMN10H170SK3-13

DIODES · FETs & Power MOSFETs · MPN DMN10H170SK3-13

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Specifications

Gate Charge(Qg)9.7nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)36pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)160mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.167nF
TypeN-Channel

Technical details

N-Channel 100V 12A 42W Surface Mount TO-252(DPAK)

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