DIODES · FETs & Power MOSFETs · MPN DMN10H170SFGQ-13
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| Gate Charge(Qg) | 14.9nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 2.9A;8.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 940mW |
| Reverse Transfer Capacitance (Crss@Vds) | 24.6pF |
| RDS(on) | 122mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 870.7pF |
100V 3V 940mW 122mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS