DIODES · FETs & Power MOSFETs · MPN DMN10H170SFG-7
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| Gate Charge(Qg) | 14.9nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 2.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 940mW |
| Reverse Transfer Capacitance (Crss@Vds) | 24.6pF |
| RDS(on) | 122mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 870.7pF |
N-Channel 100V 2.9A 0.94W Surface Mount PowerDI3333-8