DIODES · FETs & Power MOSFETs · MPN DMN10H170SFDE-7
No reviews yet — be the first to review DIODES DMN10H170SFDE-7.
| Gate Charge(Qg) | 4.9nC@4.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 2.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 660mW |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 160mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.167nF |
N-Channel 100V 2.9A 0.66W Surface Mount UDFN2020-6