DIODES DMN10H120SFG-7

DIODES · FETs & Power MOSFETs · MPN DMN10H120SFG-7

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Specifications

Gate Charge(Qg)10.6nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)3.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)110mΩ
Number1 N-channel
Input Capacitance(Ciss)549pF

Technical details

100V 3.8A 1W Surface Mount PowerDI3333-8

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