DIODES DMN10H120SFG-13

DIODES · FETs & Power MOSFETs · MPN DMN10H120SFG-13

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Specifications

Gate Charge(Qg)10.6nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)3.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.4W
RDS(on)122mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)549pF

Technical details

100V 3.8A 2.4W Surface Mount PowerDI3333-8

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