DIODES · FETs & Power MOSFETs · MPN DMN10H120SE-13
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| Gate Charge(Qg) | 10nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 3.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 1.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF |
| RDS(on) | 110mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 549pF |
N-Channel 100V 3.6A 1.3W Surface Mount SOT-223