DIODES DMN10H100SK3-13

DIODES · FETs & Power MOSFETs · MPN DMN10H100SK3-13

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Specifications

Gate Charge(Qg)25.2nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss@Vds)31.3pF
RDS(on)80mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.172nF
TypeN-Channel

Technical details

N-Channel 100V 18A 37W Surface Mount TO-252

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