DIODES · FETs & Power MOSFETs · MPN DMN10H099SK3-13
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| Gate Charge(Qg) | 25.2nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 34W |
| Reverse Transfer Capacitance (Crss@Vds) | 31.3pF |
| RDS(on) | 69mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.172nF |
100V 17A 3V 34W 69mΩ@6V 1 N-channel TO-252 Single FETs, MOSFETs RoHS