DIODES DMN1029UFDB-7

DIODES · FETs & Power MOSFETs · MPN DMN1029UFDB-7

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Specifications

Current - Continuous Drain(Id)5.6A
Pd - Power Dissipation1.4W
RDS(on)65mΩ@1.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage12V
Reverse Transfer Capacitance (Crss@Vds)119pF
Number2 N-Channel
Input Capacitance(Ciss)914pF
Gate Charge(Qg)10.5nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 12V 5.6A 1.4W Surface Mount UDFN2020-6

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