DIODES DMN1029UFDB-13

DIODES · FETs & Power MOSFETs · MPN DMN1029UFDB-13

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Specifications

Current - Continuous Drain(Id)5.6A
Pd - Power Dissipation1.4W
RDS(on)65mΩ@1.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage12V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)119pF
Number-
Input Capacitance(Ciss)914pF
Gate Charge(Qg)19.6nC@8V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)132pF

Technical details

5.6A 1.4W 65mΩ@1.5V 1V UDFN2020-6 FET, MOSFET Arrays RoHS

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