DIODES DMN1025UFDB-7

DIODES · FETs & Power MOSFETs · MPN DMN1025UFDB-7

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage12V
Current - Continuous Drain(Id)6.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)102pF
RDS(on)-
Number2 N-Channel
Input Capacitance(Ciss)917pF

Technical details

12V 6.9A 1V 1.7W 2 N-Channel U-DFN2020-6D Single FETs, MOSFETs RoHS

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