DIODES DMN1019UVT-7

DIODES · FETs & Power MOSFETs · MPN DMN1019UVT-7

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Specifications

Gate Charge(Qg)50.4nC@8V
Drain to Source Voltage12V
Output Capacitance(Coss)415pF
Current - Continuous Drain(Id)10.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation1.73W
Reverse Transfer Capacitance (Crss@Vds)394pF
RDS(on)41mΩ@1.2V
Number1 N-channel
Input Capacitance(Ciss)2.588nF
TypeN-Channel

Technical details

N-Channel 12V 10.7A 1.73W Surface Mount TSOT-26

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