DIODES · FETs & Power MOSFETs · MPN DMN1019USNQ-7
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| Gate Charge(Qg) | 50.6nC@8V |
|---|---|
| Drain to Source Voltage | 12V |
| Output Capacitance(Coss) | 396pF |
| Current - Continuous Drain(Id) | 9.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 1.2W |
| RDS(on) | 41mΩ@1.2V |
| Input Capacitance(Ciss) | 2.426nF |
| Type | N-Channel |
12V 9.3A 800mV 1.2W 41mΩ@1.2V N-Channel SC-59-3 Single FETs, MOSFETs RoHS