DIODES DMN1019USN-7

DIODES · FETs & Power MOSFETs · MPN DMN1019USN-7

No reviews yet — be the first to review DIODES DMN1019USN-7.

Specifications

Gate Charge(Qg)50.6nC@8V
Drain to Source Voltage12V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)9.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)41mΩ@1.2V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

N-Channel 12V 9.3A 1.2W Surface Mount SC-59

Related FETs & Power MOSFETs