DIODES · FETs & Power MOSFETs · MPN DMN1019USN-13
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| Gate Charge(Qg) | 50.6nC@8V |
|---|---|
| Drain to Source Voltage | 12V |
| Current - Continuous Drain(Id) | 9.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 680mW |
| Reverse Transfer Capacitance (Crss@Vds) | 375pF |
| RDS(on) | 10mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.426nF |
12V 9.3A 800mV 680mW 10mΩ@4.5V 1 N-channel SC-59 Single FETs, MOSFETs RoHS