DIODES · FETs & Power MOSFETs · MPN DMN1019UFDE-7
No reviews yet — be the first to review DIODES DMN1019UFDE-7.
| Gate Charge(Qg) | 50.6nC@8V |
|---|---|
| Drain to Source Voltage | 12V |
| Output Capacitance(Coss) | 396pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 2.17W |
| Reverse Transfer Capacitance (Crss@Vds) | 375pF |
| RDS(on) | 41mΩ@1.2V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.425nF |
| Type | N-Channel |
12V 11A 800mV 2.17W 41mΩ@1.2V 1 N-channel N-Channel UDFN2020-6 Single FETs, MOSFETs RoHS