DIODES DMN1014UFDF-13

DIODES · FETs & Power MOSFETs · MPN DMN1014UFDF-13

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)6.4nC@4.5V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation700mW
Reverse Transfer Capacitance (Crss@Vds)121pF
RDS(on)16mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)515pF

Technical details

12V 8A 1V 700mW 16mΩ@4.5V 1 N-channel UDFN2020-6 Single FETs, MOSFETs RoHS

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