DIODES DMN1008UFDFQ-13

DIODES · FETs & Power MOSFETs · MPN DMN1008UFDFQ-13

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)23.4nC@8V
Current - Continuous Drain(Id)12.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)270pF
RDS(on)8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)995pF

Technical details

12V 12.2A 1V 1.7W 8mΩ@4.5V 1 N-channel UDFN2020-6 Single FETs, MOSFETs RoHS

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