DIODES DMN1004UFV-7

DIODES · FETs & Power MOSFETs · MPN DMN1004UFV-7

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)47nC@8V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.9W
Reverse Transfer Capacitance (Crss@Vds)520pF
RDS(on)5.1mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)2.385nF
TypeN-Channel

Technical details

N-Channel 12V 70A 1.9W Surface Mount PowerDI3333-8

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