DIODES DMN1004UFV-13

DIODES · FETs & Power MOSFETs · MPN DMN1004UFV-13

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Specifications

Gate Charge(Qg)26nC@4.5V
Drain to Source Voltage12V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.9W
RDS(on)5.1mΩ
Reverse Transfer Capacitance (Crss@Vds)520pF
Number1 N-channel
Input Capacitance(Ciss)2.385nF

Technical details

12V 70A 1V 1.9W 5.1mΩ 1 N-channel PowerDI-3333-8 Single FETs, MOSFETs RoHS

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