DIODES DMN1004UFDF-7

DIODES · FETs & Power MOSFETs · MPN DMN1004UFDF-7

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Specifications

Gate Charge(Qg)26nC
Drain to Source Voltage12V
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.1W
Reverse Transfer Capacitance (Crss@Vds)520pF
RDS(on)7mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)2.385nF
TypeN-Channel

Technical details

N-Channel 12V 15A 2.1W Surface Mount UDFN2020-6

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