DIODES DMN1004UFDF-13

DIODES · FETs & Power MOSFETs · MPN DMN1004UFDF-13

No reviews yet — be the first to review DIODES DMN1004UFDF-13.

Specifications

Drain to Source Voltage12V
Gate Charge(Qg)47nC@10V
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.1W
Reverse Transfer Capacitance (Crss@Vds)520pF
RDS(on)4.8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.385nF

Technical details

12V 15A 1V 2.1W 4.8mΩ@4.5V 1 N-channel UDFN2020-6 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs