DIODES DMJ70H1D4SJ3

DIODES · FETs & Power MOSFETs · MPN DMJ70H1D4SJ3

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Specifications

Gate Charge(Qg)9nC@10V
Drain to Source Voltage700V
Current - Continuous Drain(Id)6.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)1.5pF
RDS(on)1.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)273pF

Technical details

700V 6.1A 5V 78W 1.4Ω@10V 1 N-channel TO-251 Single FETs, MOSFETs RoHS

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