DIODES DMJ70H1D3SK3-13

DIODES · FETs & Power MOSFETs · MPN DMJ70H1D3SK3-13

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Specifications

Drain to Source Voltage700V
Gate Charge(Qg)9.8nC@10V
Current - Continuous Drain(Id)4.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation57W
Reverse Transfer Capacitance (Crss@Vds)2.8pF
RDS(on)1.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)264pF

Technical details

700V 4.7A 2V 57W 1.4Ω@10V 1 N-channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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