DIODES DMHC10H170SFJ-13

DIODES · FETs & Power MOSFETs · MPN DMHC10H170SFJ-13

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Specifications

Current - Continuous Drain(Id)2.9A
Pd - Power Dissipation2.1W
RDS(on)250mΩ@10V
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage100V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)28pF
Number2 N-Channel + 2 P-Channel
Input Capacitance(Ciss)1.239nF
Gate Charge(Qg)17.5nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)42pF

Technical details

N-Channel+P-Channel Array 100V 2.9A 2.1W Surface Mount VDFN5045-12

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