DIODES DMG8822UTS-13

DIODES · FETs & Power MOSFETs · MPN DMG8822UTS-13

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Specifications

ConfigurationCommon Drain
Current - Continuous Drain(Id)4.9A
RDS(on)28mΩ@1.8V
Pd - Power Dissipation870mW
Gate Threshold Voltage (Vgs(th))900mV
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)81pF
Number2 N-Channel
Input Capacitance(Ciss)841pF
Gate Charge(Qg)9.6nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 20V 4.9A 0.87W Surface Mount TSSOP-8

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