DIODES DMG6898LSD-13

DIODES · FETs & Power MOSFETs · MPN DMG6898LSD-13

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Specifications

Current - Continuous Drain(Id)9.5A
RDS(on)11mΩ@4.5V
Pd - Power Dissipation1.28W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)142pF
Number2 N-Channel
Input Capacitance(Ciss)1.149nF
Gate Charge(Qg)26nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)157pF

Technical details

N-Channel 20V 9.5A 1.28W Surface Mount SO-8

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