DIODES · FETs & Power MOSFETs · MPN DMG6602SVTQ-7
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| Current - Continuous Drain(Id) | 3.4A;2.8A |
|---|---|
| RDS(on) | 60mΩ@10V;95mΩ@10V |
| Pd - Power Dissipation | 840mW;1.27W |
| Gate Threshold Voltage (Vgs(th)) | 1.9V;1V |
| Drain to Source Voltage | 30V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 9nC@10V;7nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | - |
N-Channel+P-Channel 30V 3.4A 840mW Surface Mount TSOT-23-6