DIODES · FETs & Power MOSFETs · MPN DMG6602SVT-7
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| Current - Continuous Drain(Id) | 3.4A;2.8A |
|---|---|
| RDS(on) | 38mΩ@10V;55mΩ@4.5V;73mΩ@10V;99mΩ@4.5V |
| Pd - Power Dissipation | 1.27W |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Drain to Source Voltage | 30V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF;45pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 290pF;350pF |
| Gate Charge(Qg) | 13nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 40pF;50pF |
N-Channel+P-Channel Array 30V Surface Mount TSOT-26