DIODES DMG4800LSDQ-13

DIODES · FETs & Power MOSFETs · MPN DMG4800LSDQ-13

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Specifications

Current - Continuous Drain(Id)9.8A
Pd - Power Dissipation1.5W
RDS(on)16mΩ@10V
Gate Threshold Voltage (Vgs(th))1.6V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)122pF
Number2 N-Channel
Input Capacitance(Ciss)798pF
Gate Charge(Qg)8.56nC@5V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 30V 9.8A 1.5W Surface Mount SO-8

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