DIODES DMG4800LK3-13

DIODES · FETs & Power MOSFETs · MPN DMG4800LK3-13

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)8.7nC@5V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1.71W
Reverse Transfer Capacitance (Crss@Vds)122pF
RDS(on)12mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)798pF

Technical details

N-Channel 30V 10A 1.71W Surface Mount TO-252

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