DIODES DMG4511SK4-13

DIODES · FETs & Power MOSFETs · MPN DMG4511SK4-13

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Specifications

Configuration-
Current - Continuous Drain(Id)13A;12A
RDS(on)35mΩ@10V;45mΩ@10V
Pd - Power Dissipation8.9W
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage35V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)51.9pF;75.3pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)850pF;985.2pF
Gate Charge(Qg)18.7nC@10V;19.2nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel+P-Channel 35V 13A 8.9W Surface Mount TO-252-4L

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