DIODES DMG4496SSSQ-13

DIODES · FETs & Power MOSFETs · MPN DMG4496SSSQ-13

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)10.2nC@10V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.42W
Reverse Transfer Capacitance (Crss@Vds)50.4pF
RDS(on)21.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)493.5pF

Technical details

30V 10A 2V 1.42W 21.5mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS

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