DIODES DMG4466SSS-13

DIODES · FETs & Power MOSFETs · MPN DMG4466SSS-13

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Specifications

Gate Charge(Qg)17nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation1.42W
Reverse Transfer Capacitance (Crss@Vds)61.4pF
RDS(on)33mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)478.9pF

Technical details

N-Channel 30V 10A 1.42W Surface Mount SO-8

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