DIODES DMG4413LSS-13

DIODES · FETs & Power MOSFETs · MPN DMG4413LSS-13

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Specifications

Gate Charge(Qg)46nC@5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)711pF
RDS(on)7.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.965nF

Technical details

P-Channel 30V 12A 1.7W Surface Mount SO-8

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