DIODES · FETs & Power MOSFETs · MPN DMG3415UFY4Q-7
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| Gate Charge(Qg) | 10nC@4.5V |
|---|---|
| Drain to Source Voltage | 16V |
| Current - Continuous Drain(Id) | 2.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 650mW |
| RDS(on) | 39mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 282pF |
P-Channel 16V 2.5A 650mW Surface Mount X2-DFN2015-3