DIODES DMG3414U

DIODES · FETs & Power MOSFETs · MPN DMG3414U

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Specifications

Gate Charge(Qg)9.6nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)4.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation780mW
RDS(on)28mΩ@1.8V
Reverse Transfer Capacitance (Crss@Vds)81.2pF
Number1 N-channel
Input Capacitance(Ciss)829.9pF

Technical details

N-Channel 20V 4.2A 0.78W Surface Mount SOT-23

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