DIODES DMG3407SSN-7

DIODES · FETs & Power MOSFETs · MPN DMG3407SSN-7

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Specifications

Gate Charge(Qg)13.3nC
Drain to Source Voltage30V
Output Capacitance(Coss)114pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.1W
Reverse Transfer Capacitance (Crss@Vds)105pF
RDS(on)50mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)700pF
Vgs±20V

Technical details

P-Channel 30V 4A 1.1W Surface Mount SC-59

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